Vapor phase photoresist silylation process

Details Vapor phase photoresist silylation process Vapor phase photoresist silylation process

1987-05-19

1989-02-28

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430323, 156628, 156643, G03C 500

Patent

active

048085111

ABSTRACT:
A process for improved vapor phase silylation of photoresist is disclosed. The process uses silylation materials which either produce a strong base such as dimethylamine upon reaction with a resist film or which contain an improved chemical leaving group such as acetate. The process is effective at temperatures of 135 C. and below. Preferred silylation materials are N,N-dimethylaminotrimethylsilane and trimethylsilylacetate.

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patent: 4491628 (1985-01-01), Ito et al.
patent: 4518787 (1985-05-01), Treadgold
patent: 4552833 (1985-11-01), Ito et al.
patent: 4596761 (1986-06-01), Brault
patent: 4657845 (1987-04-01), Frechet et al.

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