Light emission from rare-earth element-doped CaF.sub.2 thin film

Details Light emission from rare-earth element-doped CaF.sub.2 thin film Light emission from rare-earth element-doped CaF.sub.2 thin film

1994-10-18

1995-12-12

Scott, Jr., Leon

Coherent light generators

Thin film laser

372 69, 372 39, 372 44, 372 50, H01S 330

Patent

active

054756987

ABSTRACT:
By growing semi-insulating CaF.sub.2 films (296) on a silicon substrate (240), forming superlattice structures (260) made of CaF.sub.2 :Nd and other semiconductor layers (294) and by associating a co-dopant with Nd in the CaF.sub.2 films photoluminescence efficiency of CaF.sub.2 films is increased. This permits using electrons to produce photons and controlling optoelectronic devices using CaF.sub.2 films through voltage variation.

REFERENCES:
patent: 3258715 (1966-06-01), Johnson
patent: 3731325 (1978-05-01), Wild et al.
patent: 4995043 (1991-02-01), Kuwata et al.
patent: 5038358 (1991-08-01), Rand
patent: 5107538 (1992-04-01), Benton et al.
patent: 5117437 (1992-05-01), Rand
patent: 5249189 (1993-09-01), Scheps
patent: 5260963 (1993-11-01), Baird et al.
patent: 5301204 (1994-04-01), Cho et al.

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