Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2006-02-21
2006-02-21
Lund, Jeffrie R. (Department: 1763)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192100, C204S298110, C137S001000, C137S014000, C427S569000, C118S715000, C118S504000
Reexamination Certificate
active
07001491
ABSTRACT:
One or more chambers of a multi-chamber vacuum processing apparatus are provided with a high gas flow conductance path to an exhaust volume of the apparatus that is maintained at high vacuum with a high vacuum pump. Separate pumps for the one or more chambers are made unnecessary by providing such chambers with a protective deposition shield or shield set that is configured to substantially protect walls of the chamber and the gas flow conductance path from deposition and to partially impede the gas flow from the chamber through the gas flow conductance path to the exhaust volume so that the chamber can be operated at a higher pressure than that of the exhaust volume and the chambers can be operated at different pressures and without cross-contamination. Preferably, a nested set of chamber shields is used. A controller is programmed to control the processing of wafers in the chambers by controlling the supply of process gas into the chambers.
REFERENCES:
patent: 4548699 (1985-10-01), Hutchinson et al.
patent: 4756815 (1988-07-01), Turner et al.
patent: 4915564 (1990-04-01), Eror et al.
patent: 5024747 (1991-06-01), Turner et al.
patent: 5065698 (1991-11-01), Koike
patent: 5167789 (1992-12-01), Latz
patent: 5215619 (1993-06-01), Cheng et al.
patent: 5281320 (1994-01-01), Turner et al.
patent: 5470451 (1995-11-01), Kobayashi et al.
patent: 5538603 (1996-07-01), Guo
patent: 5690795 (1997-11-01), Rosenstein et al.
patent: 5736021 (1998-04-01), Ding et al.
patent: 5879523 (1999-03-01), Wang et al.
patent: 5964947 (1999-10-01), Zhao et al.
patent: 6022461 (2000-02-01), Kobayashi et al.
patent: 6176981 (2001-01-01), Hong et al.
patent: 6296747 (2001-10-01), Tanaka
patent: 6475353 (2002-11-01), Lantsman
patent: 6521105 (2003-02-01), Tani et al.
patent: 6645357 (2003-11-01), Powell
patent: 6719886 (2004-04-01), Drewery et al.
patent: 6730174 (2004-05-01), Liu et al.
patent: 6837974 (2005-01-01), Lawson et al.
patent: 2002/0144657 (2002-10-01), Chiang et al.
patent: 2003/0209422 (2003-11-01), Wang et al.
patent: 2004/0025788 (2004-02-01), Ogasawara et al.
patent: 2004/0262155 (2004-12-01), Lombardi et al.
patent: 2000-239825 (2000-09-01), None
Foster Robert F.
Lombardi Michael J.
Reynolds Glyn J.
Rowan, Jr. Robert C.
Turner Frederick T.
Lund Jeffrie R.
Tokyo Electron Limited
Wood Herron & Evans L.L.P.
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