Two-mask process for metal-insulator-metal capacitors and...

Details Two-mask process for metal-insulator-metal capacitors and... Two-mask process for metal-insulator-metal capacitors and...

2005-08-23

2005-08-23

Zarneke, David (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S240000, C438S635000, C438S636000, C438S393000, C438S396000, C438S244000

Reexamination Certificate

active

06933191

ABSTRACT:
MIM capacitors and thin film resistors are fabricated with at least one less lithographic step than the prior art methods. The process step reduction is realized by using semi-transparent metallic electrodes, fabricated with a two-mask process, which provides for direct alignment, and eliminates the need for alignment trenches in an additional layer.

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