Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-08-20
2010-06-29
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S592000, C438S653000
Reexamination Certificate
active
07745329
ABSTRACT:
In one embodiment, a method for forming a tungsten barrier material on a substrate is provided which includes depositing a tungsten layer on a substrate during a vapor deposition process and exposing the substrate sequentially to a tungsten precursor and a nitrogen precursor to form a tungsten nitride layer on the tungsten layer. Some examples provide that the tungsten layer may be deposited by sequentially exposing the substrate to the tungsten precursor and a reducing gas (e.g., diborane or silane) during an atomic layer deposition process. The tungsten layer may have a thickness of about 50 Å or less and tungsten nitride layer may have an electrical resistivity of about 380 μΩ-cm or less. Other examples provide that a tungsten bulk layer may be deposited on the tungsten nitride layer by a chemical vapor deposition process.
REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4486487 (1984-12-01), Skarp et al.
patent: 4767494 (1988-08-01), Kobayashi et al.
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4813846 (1989-03-01), Helms et al.
patent: 4829022 (1989-05-01), Kobayashi et al.
patent: 4834831 (1989-05-01), Nishizawa et al.
patent: 4838983 (1989-06-01), Schumaker et al.
patent: 4838993 (1989-06-01), Aoki et al.
patent: 4840921 (1989-06-01), Matsumoto et al.
patent: 4845049 (1989-07-01), Sunakawa et al.
patent: 4859307 (1989-08-01), Nishizawa et al.
patent: 4859625 (1989-08-01), Matsumoto et al.
patent: 4859627 (1989-08-01), Sunakawa et al.
patent: 4861417 (1989-08-01), Mochizuki et al.
patent: 4876218 (1989-10-01), Pessa et al.
patent: 4892751 (1990-01-01), Miyake et al.
patent: 4917556 (1990-04-01), Stark et al.
patent: 4927670 (1990-05-01), Erbil
patent: 4931132 (1990-06-01), Aspnes et al.
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4960720 (1990-10-01), Shimbo et al.
patent: 4975252 (1990-12-01), Nishizawa et al.
patent: 4976839 (1990-12-01), Inoue et al.
patent: 4993357 (1991-02-01), Scholz et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5013683 (1991-05-01), Petroff et al.
patent: 5028565 (1991-07-01), Chang et al.
patent: 5082798 (1992-01-01), Arimoto et al.
patent: 5085885 (1992-02-01), Foley et al.
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5130269 (1992-07-01), Kitahara et al.
patent: 5166092 (1992-11-01), Mochizuki et al.
patent: 5173474 (1992-12-01), Connell et al.
patent: 5186718 (1993-02-01), Tepman et al.
patent: 5205077 (1993-04-01), Wittstock et al.
patent: 5225366 (1993-07-01), Yoder
patent: 5227335 (1993-07-01), Holschwandner et al.
patent: 5234561 (1993-08-01), Randhawa et al.
patent: 5246536 (1993-09-01), Nishizawa et al.
patent: 5250148 (1993-10-01), Nishizawa et al.
patent: 5254207 (1993-10-01), Nishizawa et al.
patent: 5256244 (1993-10-01), Ackerman
patent: 5259881 (1993-11-01), Edwards et al.
patent: 5270247 (1993-12-01), Sakuma et al.
patent: 5278435 (1994-01-01), Van Hove et al.
patent: 5281274 (1994-01-01), Yoder
patent: 5286296 (1994-02-01), Sato et al.
patent: 5290748 (1994-03-01), Knuuttila et al.
patent: 5294286 (1994-03-01), Nishizawa et al.
patent: 5296403 (1994-03-01), Nishizawa et al.
patent: 5300186 (1994-04-01), Kitahara et al.
patent: 5306666 (1994-04-01), Izumi
patent: 5311055 (1994-05-01), Goodman et al.
patent: 5316615 (1994-05-01), Copel et al.
patent: 5316793 (1994-05-01), Wallace et al.
patent: 5330610 (1994-07-01), Eres et al.
patent: 5336324 (1994-08-01), Stall et al.
patent: 5338389 (1994-08-01), Nishizawa et al.
patent: 5348911 (1994-09-01), Jurgensen et al.
patent: 5374570 (1994-12-01), Nasu et al.
patent: 5395791 (1995-03-01), Cheng et al.
patent: 5438952 (1995-08-01), Otsuka et al.
patent: 5439876 (1995-08-01), Graf et al.
patent: 5441703 (1995-08-01), Jurgensen et al.
patent: 5443033 (1995-08-01), Nishizawa et al.
patent: 5443647 (1995-08-01), Aucoin et al.
patent: 5455072 (1995-10-01), Bension et al.
patent: 5458084 (1995-10-01), Thorne et al.
patent: 5469806 (1995-11-01), Mochizuki et al.
patent: 5480818 (1996-01-01), Matsumoto et al.
patent: 5483919 (1996-01-01), Yokoyama et al.
patent: 5484664 (1996-01-01), Kitahara et al.
patent: 5503875 (1996-04-01), Imai et al.
patent: 5521126 (1996-05-01), Okamura et al.
patent: 5526044 (1996-06-01), Tokumitsu et al.
patent: 5526244 (1996-06-01), Bishop
patent: 5527733 (1996-06-01), Nishizawa et al.
patent: 5532511 (1996-07-01), Nishizawa et al.
patent: 5540783 (1996-07-01), Eres et al.
patent: 5580380 (1996-12-01), Liu et al.
patent: 5601651 (1997-02-01), Watabe et al.
patent: 5609689 (1997-03-01), Kato et al.
patent: 5616181 (1997-04-01), Yamamoto et al.
patent: 5637530 (1997-06-01), Gaines et al.
patent: 5641984 (1997-06-01), Aftergut et al.
patent: 5644128 (1997-07-01), Wollnik et al.
patent: 5667592 (1997-09-01), Boitnott et al.
patent: 5674786 (1997-10-01), Turner et al.
patent: 5693139 (1997-12-01), Nishizawa et al.
patent: 5695564 (1997-12-01), Imahashi
patent: 5705224 (1998-01-01), Murota et al.
patent: 5707880 (1998-01-01), Aftergut et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5730801 (1998-03-01), Tepman et al.
patent: 5730802 (1998-03-01), Ishizumi et al.
patent: 5733816 (1998-03-01), Iyer et al.
patent: 5747113 (1998-05-01), Tsai
patent: 5749974 (1998-05-01), Habuka et al.
patent: 5788447 (1998-08-01), Yonemitsu et al.
patent: 5788799 (1998-08-01), Steger et al.
patent: 5796116 (1998-08-01), Nakata et al.
patent: 5801634 (1998-09-01), Young et al.
patent: 5804488 (1998-09-01), Shih et al.
patent: 5807792 (1998-09-01), Ilg et al.
patent: 5830270 (1998-11-01), McKee et al.
patent: 5834372 (1998-11-01), Lee
patent: 5835677 (1998-11-01), Li et al.
patent: 5851849 (1998-12-01), Comizzoli et al.
patent: 5855675 (1999-01-01), Doering et al.
patent: 5855680 (1999-01-01), Soininen et al.
patent: 5856219 (1999-01-01), Naito et al.
patent: 5858102 (1999-01-01), Tsai
patent: 5866213 (1999-02-01), Foster et al.
patent: 5866795 (1999-02-01), Wang et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5882165 (1999-03-01), Maydan et al.
patent: 5882413 (1999-03-01), Beaulieu et al.
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5923056 (1999-07-01), Lee et al.
patent: 5923985 (1999-07-01), Aoki et al.
patent: 5925574 (1999-07-01), Aoki et al.
patent: 5928389 (1999-07-01), Jevtic
patent: 5942040 (1999-08-01), Kim et al.
patent: 5947710 (1999-09-01), Cooper et al.
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 5989345 (1999-11-01), Hatano et al.
patent: 6001669 (1999-12-01), Gaines et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6025627 (2000-02-01), Forbes et al.
patent: 6036773 (2000-03-01), Wang et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6043177 (2000-03-01), Falconer et al.
patent: 6051286 (2000-04-01), Zhao et al.
patent: 6062798 (2000-05-01), Muka
patent: 6071808 (2000-06-01), Merchant et al.
patent: 6084302 (2000-07-01), Sandhu
patent: 6086677 (2000-07-01), Umotoy et al.
patent: 6099604 (2000-08-01), Sandhu et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6110556 (2000-08-01), Bang et al.
patent: 6113977 (2000-09-01), Soininen et al.
patent: 6117244 (2000-09-01), Bang et al.
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6130147 (2000-10-01), Major et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6140237 (2000-10-01), Chan et al.
patent: 6140238 (2000-10-01), Kitch
patent: 6143659 (2000-11-01), Leem et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6156382 (2000-12-01), Rajagopalan et al.
patent: 6158446 (2000-12-01), Mohindra et al.
patent: 6162715 (2000-12-01), Mak et al.
patent: 6174377 (2001-01-01), Doering et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6197683 (2001-03-01), Kang et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206967 (2001-03-01), Mak et al.
patent: 6207302 (2001-03-01), Sugiura et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6218298 (2001-04-01), Hoinkis
patent: 62451
Chen Aihua
Kroemer Ulrich
Li Ming
Luo Lee
Wang Shulin
Applied Materials Inc.
Dang Phuc T
Patterson & Sheridan
LandOfFree
Tungsten nitride atomic layer deposition processes does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tungsten nitride atomic layer deposition processes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tungsten nitride atomic layer deposition processes will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4207255