Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-04
1999-03-09
Booth, Richard A.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438257, H01L 218247
Patent
active
058799915
ABSTRACT:
A method of creating a non-volatile memory device, featuring self-alignment of a control gate structure, to an underlying floating gate structure, has been developed. The formation of a first polysilicon floating gate shape, completely covering the semiconductor substrate, with openings only to underlying field oxide regions, prevents a deleterious trenching phenomena from occurring during a subsequent patterning, used to define an overlying, control gate structure. A photoresist shape is used as a mask to allow patterning of the control gate structure to be performed, via an anisotropic procedure, applied to a polysilicon layer, followed by the continuation of the anisotropic RIE procedure, applied to the first polysilicon floating gate shape, creating the floating gate structure.
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Lui Hon-Hung
Shiu Shou-Yi
Ackerman Stepehen B.
Booth Richard A.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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