Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-21
2005-06-21
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S655000
Reexamination Certificate
active
06909157
ABSTRACT:
Methods such as Remote Plasma Nitridation (RPN) are used to introduce nitrogen into a gate dielectric layer. However, these methods yield nitrided layers where the layers are not uniform, both in cross-sectional profile and in nitrogen profile. Subjecting the nitrided layer to an additional NO anneal process increases the uniformity of the nitrided layer.
REFERENCES:
patent: 4762728 (1988-08-01), Keyser et al.
patent: 5840610 (1998-11-01), Gilmer et al.
patent: 5861651 (1999-01-01), Brasen et al.
patent: 5880040 (1999-03-01), Sun et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 6017791 (2000-01-01), Wang et al.
patent: 6706644 (2004-03-01), Burnham et al.
patent: 2002/0009900 (2002-01-01), Tay et al.
Burnham Jay S.
Nakos James S.
Quinlivan James J.
Shank Steven M.
Tucker Deborah A.
Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Prenty Mark V.
Sabo William D.
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