Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-02-08
2011-02-08
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S540000, C438S770000
Reexamination Certificate
active
07884017
ABSTRACT:
Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in the oxidizing environment both removes residues and oxidizes exposed copper surfaces to form a cupric oxide layer. The thermal treatment in the reducing environment then reduces the cupric oxide to elemental copper. This leaves the exposed copper clean and in condition for further processing, such as electroless plating.
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Arunagiri Tiruchirapalli
Boyd John
Dordi Yezdi
Howald Arthur M.
Korolik Mikhail
Ghyka Alexander G
Lam Research Corporation
Nikmanesh Seahvosh J
Schwegman Lundberg & Woessner, P.A.
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