Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2006-12-06
2010-02-23
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S528000, C257SE21339, C250S492210
Reexamination Certificate
active
07666771
ABSTRACT:
A process is disclosed which incorporates implantation of a carbon cluster into a substrate to improve the characteristics of transistor junctions when the substrates are doped with Boron and Phosphorous in the manufacturing of PMOS transistor structures in integrated circuits. There are two processes which result from this novel approach: (1) diffusion control for USJ formation; and (2) high dose carbon implantation for stress engineering. Diffusion control for USJ formation is demonstrated in conjunction with a boron or shallow boron cluster implant of the source/drain structures in PMOS. More particularly, first, a cluster carbon ion, such as C16Hx+, is implanted into the source/drain region at approximately the same dose as the subsequent boron implant; followed by a shallow boron, boron cluster, phosphorous or phosphorous cluster ion implant to form the source/drain extensions, preferably using a borohydride cluster, such as B18Hx+or B10Hx+. Upon subsequent annealing and activation, the boron diffusion is reduced, due to the gettering of interstitial defects by the carbon atoms.
REFERENCES:
patent: 5354381 (1994-10-01), Sheng
patent: 5497006 (1996-03-01), Sferlazzo et al.
patent: 5558718 (1996-09-01), Leung
patent: 6043139 (2000-03-01), Eaglesham et al.
patent: 6153920 (2000-11-01), Gossmann et al.
patent: 6207005 (2001-03-01), Henley et al.
patent: 6452338 (2002-09-01), Horsky
patent: 6686595 (2004-02-01), Horsky
patent: 6893907 (2005-05-01), Maydan et al.
patent: 7015108 (2006-03-01), Vanderpool et al.
patent: 2002/0139975 (2002-10-01), Lewis et al.
patent: 2004/0002202 (2004-01-01), Horsky et al.
patent: 2004/0164341 (2004-08-01), Forbes et al.
patent: 2004/0166612 (2004-08-01), Maydan et al.
patent: 2004/0235280 (2004-11-01), Keys et al.
patent: 2005/0181621 (2005-08-01), Borland et al.
patent: 2006/0097193 (2006-05-01), Horsky et al.
patent: 2007/0148888 (2007-06-01), Krull
patent: 2007/0194252 (2007-08-01), Horsky et al.
patent: 2008/0299749 (2008-12-01), Jacobson et al.
patent: 4440072 (1996-02-01), None
patent: 0 219 243 (1987-04-01), None
patent: 06844937 (2009-10-01), None
patent: WO 99/65070 (1999-12-01), None
patent: WO 01/43175 (2001-06-01), None
patent: WO 2004/003973 (2004-01-01), None
patent: WO 2004/003973 (2004-01-01), None
patent: WO 2007/146942 (2007-12-01), None
Cowern et al., Computational Modeling of Co-implanted Carbon for 65nm Node USJ Formation, p. 300.
Rizk et al., “Modeling the Suppression of Borun Diffusion in Si/SiGe Due to Carbon Incorporation”, pp. 315-322.
Robertson et al., “The effect of impurities on diffusion and activation of ion implanted boron in silicon”,Mat. Res. Soc. Symp., vol. 610, 2000, pp. B5.8.1-5.8.6.
Law et al., “Influence of Carbon of the Diffusion of Interstitials and Borun in Silicon”, pp. B7.4.1-B7.4.5.
Collart et al., “Co-Implantation with Conventional Spike Anneal Solutions for 45nm Ultra-Shallow Junction Formation”,Proc. Of 8thIntl. Workshop on Fabrication, Characterization and Modeling of the Ultra-Shallow Doping Profiles in Semiconductors, Jun. 2005, pp. 327-328.
Stolk et al., “Undrstanding and Controlling Transient Enhanced Dopant Diffusion in Silicon”,Mat. Res. Soc. Symp. Proc., vol. 354, 195, pp. 307-318.
Ueda et al., “High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation”,Nuclear Instruments and Methods in Physics Research, 2001, pp. 715-720.
Lindner, “ion beam synthesis of buried SiC layers in silicon: Basic physical processes”,Nuclear instruments and Methods in Physics Research, 2001, pp. 44-54.
Lindner et al., “Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon”,Materials Science Forum, vols. 264-268 (1998), pp. 215-218.
Ang et al., “Thin body siliconon-insulator N-MOSFET with silicon carbon source/drain regions for performance enhancement”,IEDM Workshop, Washington, D.C., Dec. 2005, pp.20.3.1-20.3.4.
Deguchi et al., “B-SiC formation by low-energy ion doping technique”,Japanese Jour. Of Appl. Physics, vol. 29, No. 8, Aug. 1990, pp. 1493-1496.
Vanderpool et al., “Control of Phosphorus Transient Diffusing using Co-implantation”Ion Implantation Technology, Jun. 2006, pp. 41-45.
Liebert et al., “Plasma Doping System for 200 and 300 mm Wafers”Proceedings, 13thInt. Conf. Ion Implant. Tech., IEEE, 2000, pp. 472-475.
Renau et al. “Comparison of Plasma Doping and Beamline Technologies for Low Energy Ion Implantation,”IEEE Proceedings of the '2002 14thInt. conf on Ion Implantation Technology, Taos, NM, USA, Sep. 22-27, 2002, pp. 151-156.
Stegemann et al., Subsequent Layer Growth of Supported Nanopartilces by Deposition of Sb4Clusters onto MoS2(0001), NewJournal of Physics4 (2002) 89.
Polak et al., “Photoelectron Spectroscopy of Small Antimony Cluster Anions”J. Chem. Phys 97(12), Dec. 15, 1992.
Horsky et al. “Boron Beam Performance and In-Situ Cleaning of the ClusterIon Source”, CP866, Ion Implantation Technology, 2006 American Institute of Physics.
Honing et al. “Vapor Pressure Data for the Solid and Liquid Elements”, RCA Laboratories, RCA Review, Jun. 1969, p. 284-305.
Borland et al. “45nm Node p+ USJ Formation with High Dopant Activation and Low Damage”, IEEE 2006, p. 4-9.
Borland et al. “High Dopant Activation and Low Damage P+ USJ Formation” CP866, Ion Implantation Technology, 2006 American Institute of Physics, p. 96-100.
Kawasaki et al. “Ultra-Shallow Junction Formation by B18H22Ion Implantation” Nuclear Instruments and Methods in Physics Research B 237 (2005) pp. 25-29.
U.S. Appl. No. 10/519,699, filed Sep. 14, 2005, Horsky et al.
U.S. Appl. No. 10/251,491, filed Sep. 20, 2002, Horsky et al.
U.S. Appl. No. 11/934,873, filed Nov. 5, 2007, Horsky et al.
Thompson et al. “Silicon Melt, Regrowth and Amorphization Velocities During Pulsed Laser Irradiation” 1983 the American Physical Society, Physical Review Letters, vol. 50, No. 12, Mar. 21, 1983, p. 896-899.
Motooka et al. “Amorphization Processes In Ion Implanted Si: Temperature Dependence” Japanese Journal of Applied Physics, vol. 30, No. 12B, Dec. 1991, pp. 3617-3620.
Thomas N. Horsky “Universal Ion Source for Cluster and Monomer Implantation” Ion Implantation Technology, 2006 American Institute of Physics, p. 159.
Kirkby et al. “Ion Implantation Technology” 16thInternational Conference on Ion Implantation Technology IIT 2006, Marseille, France, Jun. 11-16, 2006.
Motooka et al. “Amorphization Processes in Ion Implanted Si: Ion Species Effect” 1992 American Institute of Physics, Appl. Physics Lett. 61(25), Dec. 12, 1992.
Motooka et al., “Amorphization Processes in Self-Ion-Implanted Si: Dose Dependence” 1991 American Institute of Physics, Appl. Phys. Lett. 58 (21), May 27, 1991, p. 2360-2362.
Tieger et al. “ClusterBoron Implants ion a High Current Implanter” 2006 American Institute of Physics, Ion Implantation Technology, p. 206-209.
Landi et al. “Electrical Activation of Boron-Implanted Silicon During Rapid Thermal Annealing” Appl. Phys. A. 47, 359-366 (1988).
Jones et al. Using doping Superlattices to Study Transient-Enhanced Diffusion of Boron in Regrown Silicon. 1996 American Institute of Physics, Appl. Phys. Lett. 68 (22) May 27, 1996.
Solmi et al. “High-Concentration Boron Diffusion In Silicon: Simulation of the Precipitation Phenomena” 1990 American Institute of Physics, J. Appl. Phys. 68 (7), Oct. 1, 1990.
Holland et al. “Characteristics of Rapid Thermal Annealing in Ion-Implanted Silicon” 1986 American Institute of Physics, J. Appl. Phys. 59 (3), Feb. 1, 1986.
Schmitz et al. “Ultra-Shallow Junction Formation by Outdiffusion from Implanted Oxide” IEEE 1998, p. 37.3.1-37.3.4.
Nishikawa et al., “Reduction of Transient Boron Diffusion in Preamorphized Si by Carbon Impl
Horsky Thomas N.
Krull Wade A.
Katten Muchin & Rosenman LLP
Paniaguas John S.
Semequip Inc.
Smoot Stephen W
LandOfFree
System and method for the manufacture of semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with System and method for the manufacture of semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for the manufacture of semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4214457