System and method for forming an integrated barrier layer

Details System and method for forming an integrated barrier layer System and method for forming an integrated barrier layer

2007-10-09

2007-10-09

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S680000, C438S685000, C438S762000, C257SE21170

Reexamination Certificate

active

10414271

ABSTRACT:
An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.

REFERENCES:
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4486487 (1984-12-01), Skarp
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 5306666 (1994-04-01), Izumi
patent: 5374570 (1994-12-01), Nasu et al.
patent: 5526244 (1996-06-01), Bishop
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5923056 (1999-07-01), Lee et al.
patent: 5940726 (1999-08-01), Yu
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6015917 (2000-01-01), Bhandari et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6084302 (2000-07-01), Sandhu
patent: 6124158 (2000-09-01), Dautartas et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6144060 (2000-11-01), Park et al.
patent: 6162715 (2000-12-01), Mak et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6197683 (2001-03-01), Kang et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6207302 (2001-03-01), Sugiura et al.
patent: 6207487 (2001-03-01), Kim et al.
patent: 6270572 (2001-08-01), Kim et al.
patent: 6284646 (2001-09-01), Leem
patent: 6287965 (2001-09-01), Kang et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6333260 (2001-12-01), Kwon et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6348376 (2002-02-01), Lim et al.
patent: 6355561 (2002-03-01), Sandhu et al.
patent: 6358829 (2002-03-01), Yoon et al.
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6369430 (2002-04-01), Adetutu et al.
patent: 6372598 (2002-04-01), Kang et al.
patent: 6379748 (2002-04-01), Bhandari et al.
patent: 6391785 (2002-05-01), Satta et al.
patent: 6399491 (2002-06-01), Jeon et al.
patent: 6416577 (2002-07-01), Suntoloa et al.
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6420189 (2002-07-01), Lopatin
patent: 6423619 (2002-07-01), Grant et al.
patent: 6428859 (2002-08-01), Chiang et al.
patent: 6447933 (2002-09-01), Wang et al.
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6451695 (2002-09-01), Sneh
patent: 6458701 (2002-10-01), Chae et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6475910 (2002-11-01), Sneh
patent: 6482262 (2002-11-01), Elers et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6486437 (2002-11-01), Tanabe
patent: 6511539 (2003-01-01), Raaijmakers
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6548424 (2003-04-01), Putkonen
patent: 6590344 (2003-07-01), Tao et al.
patent: 6635965 (2003-10-01), Lee et al.
patent: 6827978 (2004-12-01), Yoon et al.
patent: 7005372 (2006-02-01), Levy et al.
patent: 7141494 (2006-11-01), Lee et al.
patent: 2001/0000866 (2001-05-01), Sneh et al.
patent: 2001/0002280 (2001-05-01), Sneh
patent: 2001/0009140 (2001-07-01), Bondestan et al.
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0024387 (2001-09-01), Raaijmakers et al.
patent: 2001/0025979 (2001-10-01), Kim et al.
patent: 2001/0028924 (2001-10-01), Sherman
patent: 2001/0029094 (2001-10-01), Mee-Young et al.
patent: 2001/0034123 (2001-10-01), Jeon et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2001/0050039 (2001-12-01), Park
patent: 2001/0054730 (2001-12-01), Kim et al.
patent: 2001/0054769 (2001-12-01), Raaijmakers et al.
patent: 2002/0000598 (2002-01-01), Kang et al.
patent: 2002/0004293 (2002-01-01), Soininen et al.
patent: 2002/0007790 (2002-01-01), Park
patent: 2002/0019121 (2002-02-01), Pyo
patent: 2002/0020869 (2002-02-01), Park et al.
patent: 2002/0021544 (2002-02-01), Cho et al.
patent: 2002/0031618 (2002-03-01), Sherman
patent: 2002/0037630 (2002-03-01), Agarwal et al.
patent: 2002/0041931 (2002-04-01), Suntola et al.
patent: 2002/0048635 (2002-04-01), Kim et al.
patent: 2002/0048880 (2002-04-01), Lee
patent: 2002/0052097 (2002-05-01), Park
patent: 2002/0055235 (2002-05-01), Agarwal et al.
patent: 2002/0061612 (2002-05-01), Sandhu et al.
patent: 2002/0068458 (2002-06-01), Chiang et al.
patent: 2002/0073924 (2002-06-01), Chiang et al.
patent: 2002/0074588 (2002-06-01), Lee
patent: 2002/0076481 (2002-06-01), Chiang et al.
patent: 2002/0076507 (2002-06-01), Chiang et al.
patent: 2002/0076508 (2002-06-01), Chiang et al.
patent: 2002/0076837 (2002-06-01), Hujanen et al.
patent: 2002/0081844 (2002-06-01), Jeon et al.
patent: 2002/0090829 (2002-07-01), Sandhu et al.
patent: 2002/0094689 (2002-07-01), Park
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0104481 (2002-08-01), Chiang et al.
patent: 2002/0105088 (2002-08-01), Yang et al.
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2002/0106846 (2002-08-01), Seutter et al.
patent: 2002/0109168 (2002-08-01), Kim et al.
patent: 2002/0117399 (2002-08-01), Chen et al.
patent: 2002/0121697 (2002-09-01), Marsh
patent: 2002/0144655 (2002-10-01), Chiang et al.
patent: 2002/0144657 (2002-10-01), Chiang et al.
patent: 2002/0146511 (2002-10-01), Chiang et al.
patent: 2002/0155722 (2002-10-01), Satta et al.
patent: 2002/0162506 (2002-11-01), Sneh et al.
patent: 2002/0164421 (2002-11-01), Chiang et al.
patent: 2002/0164423 (2002-11-01), Chiang et al.
patent: 2002/0177282 (2002-11-01), Song
patent: 2002/0182320 (2002-12-01), Leskela et al.
patent: 2002/0187256 (2002-12-01), Elers et al.
patent: 2002/0187631 (2002-12-01), Kim et al.
patent: 2002/0197402 (2002-12-01), Chiang et al.
patent: 2003/0013320 (2003-01-01), Kim et al.
patent: 2003/0031807 (2003-02-01), Elers et al.
patent: 2003/0032281 (2003-02-01), Werkhoven et al.
patent: 2003/0042630 (2003-03-01), Babcoke et al.
patent: 2003/0049942 (2003-03-01), Haukka et al.
patent: 2003/0072975 (2003-04-01), Shero et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0082300 (2003-05-01), Todd et al.
patent: 2004/0202786 (2004-10-01), Wongsenakhum et al.
patent: 2005/0031786 (2005-02-01), Lee et al.
patent: 1 167 569 (2002-01-01), None
patent: 2 355 727 (2001-05-01), None
patent: 2-246161 (1990-10-01), None
patent: 10-308283 (1998-11-01), None
patent: 2000-31387 (2000-01-01), None
patent: 2000-58777 (2000-02-01), None
patent: 2000178735 (2000-06-01), None
patent: 2001111000 (2001-04-01), None
patent: 2001172767 (2001-06-01), None
patent: 2001220294 (2001-08-01), None
patent: 2001254181 (2001-09-01), None
patent: WO 96/17107 (1996-06-01), None
patent: WO 98/51838 (1998-11-01), None
patent: WO 99/01595 (1999-01-01), None
patent: WO 99/29924 (1999-06-01), None
patent: WO 99/65064 (1999-12-01), None
patent: WO 00/15865 (2000-03-01), None
patent: WO 00/16377 (2000-03-01), None
patent: WO 00/54320 (2000-09-01), None
patent: WO 00/63957 (2000-10-01), None
patent: WO 00/79576 (2000-12-01), None
patent: WO 01/15220 (2001-03-01), None
patent: WO 01/17692 (2001-03-01), None
patent: WO 01/27346 (2001-04-01), None
patent: WO 01/27347 (2001-04-01), None
patent: WO 01/29280 (2001-04-01), None
patent: WO 01/29891 (2001-04-01), None
patent: WO 01/29893 (2001-04-01), None
patent: WO 01/36702 (2001-05-01), None
patent: WO 01/66832 (2001-09-01), None
patent: WO 02/08485 (2002-01-01), None
patent: WO 02/43115 (2002-05-01), None
patent: WO 02/45167 (2002-06-01), None
patent: WO 02/067319 (2002-08-01), None
patent: WO 2005/027211 (2005-03-01), None
Klaus, et al. “Atomically Controlled Growth of Tungsten and Tungsten Nitride Using Sequential Surface Reactions,” Applied Surface Science, 162-163 (2000) 479-491.
Yang, et al. “Atomic Layer Deposition of Tungsten Film from WF6/B2H6: Nucleation Layer for Advanced Semiconductor Device,” Conference Proceedings ULSI XVII (2002) Materials Research Society.
Klaus, et al. “Atomic Layer Deposition of SiO2Using Catalyzed and Uncatalyzed Self-Limiting

Affiliated with

Also associated with

Rating

System and method for forming an integrated barrier layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with System and method for forming an integrated barrier layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and System and method for forming an integrated barrier layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3878442