System and method for forming an integrated barrier layer

Details System and method for forming an integrated barrier layer System and method for forming an integrated barrier layer

2011-01-11

2011-01-11

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S680000, C438S685000, C438S762000, C257SE21170

Reexamination Certificate

active

07867914

ABSTRACT:
An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode deposition process comprising a chemical vapor deposition (CVD) step and a cyclical deposition step. The dual-mode deposition process may be performed in a single process chamber.

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