Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-05-21
2000-11-14
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20424815, 156345, 118728, C23C 1434
Patent
active
061465046
ABSTRACT:
The present invention provides optimized designs that allow the coverage of the full surface of a receiving face in a substrate while at the same time reducing material deposition on the edge of the substrate, material deposition on and/or scratching of the backside of the substrate. While the methods and apparatus of the invention are described within the framework of aluminum deposition chambers, it is contemplated that the invention will be equally effective in all other semiconductor processing chambers where avoiding edge and/or backside deposition, scratching, and/or sticking may be desirable. The invention provides a support member having a deposit collection channel with slanted walls to trap deposit particles that do not depose of the substrate thus preventing deposition and sticking in the backside of a processed substrate. The invention also provides a resting and lifting mechanism to minimize friction between the backside of the substrate and the support member thus reducing contamination of the chamber environment by particles released due to scratching of the backside of the substrate.
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Carlson Charles
Patadia Nalin
Applied Materials Inc.
Nguyen Nam
Ver Steeg Steven H.
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