Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-04-03
2007-04-03
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S785000, C438S695000
Reexamination Certificate
active
10706968
ABSTRACT:
An interconnect structure in back end of line (BEOL) applications comprising a tunable etch resistant anti-reflective (TERA) coating is described. The TERA coating can, for example, be incorporated within a single damascene structure, or a dual damascene structure. The TERA coating can serve as part of a lithographic mask for forming the interconnect structure, or it may serve as a hard mask, a chemical mechanical polishing (CMP) stop layer, or a sacrificial layer during CMP.
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Lee Eric M.
Toma Dorel Ioan
Wang David C.
Wetzel Jeffrey T.
Luu Chuong Anh
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Ltd.
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