Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of...
Reexamination Certificate
2007-03-13
2007-03-13
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
C438S758000, C438S787000, C438S789000, C438S931000, C257SE21277
Reexamination Certificate
active
11123501
ABSTRACT:
A method of processing a substrate including depositing a transition layer and a dielectric layer on a substrate in a processing chamber are provided. The transition layer is deposited from a processing gas including an organosilicon compound and an oxidizing gas. The flow rate of the organosilicon compound is ramped up during the deposition of the transition layer such that the transition layer has a carbon concentration gradient and an oxygen concentration gradient. The transition layer improves the adhesion of the dielectric layer to an underlying barrier layer on the substrate.
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U.S. Appl. No. 11/142,124, filed on Jun. 1, 2005 (APPM/009516).
Balasubramanian Ganesh
Cui Zhenjiang David
Kim Bok Hoen
Lakshmanan Annamalai
Padhi Deenesh
Applied Materials Inc.
Lebentritt Michael
Lee Kyoung
Patterson and Sheridan
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