Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1999-10-22
2000-11-21
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419212, C23C 1434
Patent
active
061497843
ABSTRACT:
A shield for a DC magnetron sputtering reactor, particularly advantageous for reliably igniting the plasma used in sputtering a ferromagnetic material such as cobalt or nickel. The grounded shield includes a slanted portion separated from the beveled periphery of the target by a small gap operating as a dark space. The shield also includes a straight cylindrical portion surrounding the main processing area. The slanted portion is joined to the cylindrical portion at a knee According to one embodiment of the invention, the knee is located greater than 9 mm from the face of the target and at a radial position at least 1 mm inward of the outer periphery of the target face.
REFERENCES:
patent: 5736021 (1998-04-01), Ding et al.
patent: 5824197 (1998-10-01), Tanaka
Forster John C.
Ngan Kenny King-Tai
Su Jingang
Yang Lisa L.
Yee Nelson A.
Applied Materials Inc.
Cantelmo Gregg
Guenzer Charles S.
Nguyen Nam
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