Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-24
2011-11-01
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S218000, C438S303000, C257SE21626
Reexamination Certificate
active
08048752
ABSTRACT:
A method of forming a semiconductor device includes providing a semiconductor substrate; forming a gate stack on the semiconductor substrate; forming a gate spacer adjacent to a sidewall of the gate stack; thinning the gate spacer; and forming a secondary gate spacer on a sidewall of the gate spacer after the step of thinning the gate spacer.
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Chuang Harry
Liang Mong-Song
Mor Yi-Shien
Peng Chih-Tang
Thei Kong-Beng
Ghyka Alexander
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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