Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-09-25
2007-09-25
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S763000, C438S788000, C257SE21277, C257SE21576
Reexamination Certificate
active
11145432
ABSTRACT:
A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited in the presence of low frequency RF power from a gas mixture including an organosilicon compound and an oxidizing gas. The low frequency RF power is terminated after the deposition of the low dielectric constant film. The oxide rich cap is deposited on the low dielectric constant film in the absence of low frequency RF power from another gas mixture including the organosilicon compound and the oxidizing gas used to deposit the low dielectric constant film.
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U.S. Appl. No. 10/840,754, filed May 6, 2004.
Balasubramanian Ganesh
Kim Bok Hoen
Lakshmanan Annamalai
Raj Daemian
Schmitt Francimar
Applied Materials Inc.
Patterson & Sheridan
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