Single electron transistor and method of manufacturing the same

Details Single electron transistor and method of manufacturing the same Single electron transistor and method of manufacturing the same

2011-06-07

2011-06-07

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S265000, C438S962000, C257S024000, C257SE29071, C257SE21403, C257SE21404, C257SE21408, C977S937000, C977S938000

Reexamination Certificate

active

07955932

ABSTRACT:
A single electron transistor includes source/drain layers disposed apart on a substrate, at least one nanowire channel connecting the source/drain layers, a plurality of oxide channel areas in the nanowire channel, the oxide channel areas insulating at least one portion of the nanowire channel, a quantum dot in the portion of the nanowire channel insulated by the plurality of oxide channel areas, and a gate electrode surrounding the quantum dot.

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