Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Dopant introduction into semiconductor region
Reexamination Certificate
2011-01-04
2011-01-04
Zarneke, David A (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Dopant introduction into semiconductor region
C257SE21135
Reexamination Certificate
active
07863067
ABSTRACT:
The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dopant layer in the semiconductor substrate adjacent the second surface using a localized annealing process, and etching the dopant layer.
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patent: 6924163 (2005-08-01), Okazaki et al.
patent: 7095050 (2006-08-01), Wanlass et al.
patent: 2006/0076590 (2006-04-01), Pain et al.
Hsu Tzu-Hsuan
Liu Ming Chyi
Shiau Gwo-Yuh
Tsai Chia-Shiung
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
Wagner Jenny L
Zarneke David A
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