4. Static information storage and retrieval
  5. Floating gate
  6. Particular connection

Tzu-Hsuan Hsu

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3D polysilicon ROM and method of fabrication thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Circuit and method for programming charge storage memory cells

Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate

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CMOS image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate

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CMOS image sensor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Electrically erasable programmable read only memory (EEPROM)...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2163258

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