Silicon resist for photolithography at short exposure...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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Details

C430S326000, C430S327000, C430S328000, C430S330000, C430S331000, C430S905000, C430S907000, C430S910000, C430S914000

Reexamination Certificate

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06974655

ABSTRACT:
A chemically amplified photo-resist includes a polymer containing acid-labile radicals attached to a polar group and also contains anchor groups that allow attachment of a consolidating agent. The polymer includes first repeating units containing siloxane groups. The photoresist on the one hand exhibits an enhanced transparency for short-wavelength radiation and on the other hand permits chemical consolidation of the structured resist. A process for producing structured resists is a also described.

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