Silicon-containing resist for photolithography

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S326000, C430S905000, C430S907000

Reexamination Certificate

active

07052820

ABSTRACT:
A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

REFERENCES:
patent: 5234793 (1993-08-01), Sebald et al.
patent: 5234794 (1993-08-01), Sebald et al.
patent: 6063543 (2000-05-01), Hien et al.
patent: 6210856 (2001-04-01), Lin et al.
patent: 6296985 (2001-10-01), Mizutani et al.
patent: 6623909 (2003-09-01), Hatakeyama et al.
patent: 0 395 917 (1990-11-01), None
patent: 0 955 562 (1999-11-01), None
patent: 1 004 936 (2000-05-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Silicon-containing resist for photolithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon-containing resist for photolithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon-containing resist for photolithography will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3645819

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.