Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-10-04
2005-10-04
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S636000, C438S689000, C438S702000, C438S780000, C438S763000, C438S778000, C438S931000, C438S952000, C438S740000, C438S355000, C438S395000, C438S758000
Reexamination Certificate
active
06951826
ABSTRACT:
The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC applications. Under certain process parameters, a fixed thickness of the silicon carbide may be used on a variety of thicknesses of underlying layers. The thickness of the silicon carbide ARC is substantially independent of the thickness of the underlying layer for a given reflectivity, in contrast to the typical need for adjustments in the ARC thickness for each underlying layer thickness to obtain a given reflectivity. Another aspect of the invention includes a substrate having a silicon carbide anti-reflective coating, comprising a dielectric layer deposited on the substrate and a silicon carbide anti-reflective coating having a dielectric constant of less than about 7.0 and preferably about 6.0 or less.
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Bencher Christopher
Feng Joe
Huang Judy
Ngai Chris
Shek Mei-Yee
Applied Materials Inc.
Baumeister B. William
Moser Patterson & Sheridan
Yevsikov Victor V.
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