Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-10-12
2011-10-18
Nguyen, Thinh (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S195000, C438S199000, C438S200000, C257S024000, C257SE21621, C977S742000
Reexamination Certificate
active
08039334
ABSTRACT:
A semiconductor structure in which a planar semiconductor device and a horizontal carbon nanotube transistor have a shared gate and a method of fabricating the same are provided in the present application. The hybrid semiconductor structure includes at least one horizontal carbon nanotube transistor and at least one planar semiconductor device, in which the at least one horizontal carbon nanotube transistor and the at least one planar semiconductor device have a shared gate and the at least one horizontal carbon nanotube transistor is located above a gate of the at least one planar semiconductor device.
REFERENCES:
patent: 6750471 (2004-06-01), Bethune et al.
patent: 6821911 (2004-11-01), Lo et al.
patent: 7247877 (2007-07-01), Hakey et al.
patent: 7288970 (2007-10-01), Bertin
patent: 7484423 (2009-02-01), Hakey et al.
patent: 7535016 (2009-05-01), Furukawa et al.
patent: 2001/0023986 (2001-09-01), Mancevski
patent: 2002/0175390 (2002-11-01), Goldstein et al.
patent: 2003/0098640 (2003-05-01), Kishi et al.
patent: 2003/0134267 (2003-07-01), Kang et al.
patent: 2003/0165418 (2003-09-01), Ajayan et al.
patent: 2003/0168683 (2003-09-01), Farnsworth et al.
patent: 2003/0178617 (2003-09-01), Appenzeller et al.
patent: 2003/0230782 (2003-12-01), Choi et al.
patent: 2004/0004235 (2004-01-01), Lee et al.
patent: 2004/0095837 (2004-05-01), Choi et al.
patent: 2004/0120183 (2004-06-01), Appenzeller et al.
patent: 2006/0038179 (2006-02-01), Afzali-Ardakani et al.
patent: 2006/0060839 (2006-03-01), Chandross et al.
S. Iijima, et al. “Helical Microtubes of Graphite Carbon”, Nature 354, 56 (19991); D.S. Bethune, et al. “Cobalt Catalyzed Growth of Carbon Nanotubes with Single-Atomic-Layer Walls” Nature 363, 605 (1993).
R. Saito, et al. “Physical Properties of Carbon Nanotubes”, Imperial College Press (1998) Chapter 5.
Bethune, et al., “Cobalt Catalyzed Growth of Carbon Nanotubes with Single-Atomic-Layer Walls” Nature 363, 605 (1993).
Martel, et al., “Carbon nanotube field effect transistors for logic applications”,Electron Devices Meeting, 2001. IEDM Technical Digest International, Dec. 2, 2001-Dec. 5, 2001, pp. 7.5.1-7.5.4.
Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Koburger, III Charles W.
International Business Machines - Corporation
Kotulak, Esq. Richard A.
Nguyen Thinh
Scully , Scott, Murphy & Presser, P.C.
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