Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-02-22
2011-02-22
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S221000, C438S425000, C438S426000, C257SE21546, C257SE21628, C257SE21642
Reexamination Certificate
active
07892929
ABSTRACT:
A method for rounding the corners of a shallow trench isolation is provided. A preferred embodiment comprises filling the trench with a dielectric and recessing the dielectric to expose a portion of the sidewalls of the trench adjacent to the surface of the substrate. The substrate is then annealed in a hydrogen ambient, which rounds the corners of the shallow trench isolation through silicon migration.
REFERENCES:
patent: 6569741 (2003-05-01), Houston et al.
patent: 6746933 (2004-06-01), Beintner et al.
patent: 6878575 (2005-04-01), Yoo et al.
patent: 6974755 (2005-12-01), Ko et al.
patent: 2006/0154438 (2006-07-01), Kishimoto et al.
patent: 2006/0205164 (2006-09-01), Ko et al.
Chen Neng-Kuo
Tsai Cheng-Yuan
Tzeng Kuo-Hwa
Xu Jeffrey Junhao
Maldonado Julio J
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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