Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-05-21
2011-10-18
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S518000, C438S530000
Reexamination Certificate
active
08039375
ABSTRACT:
A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate stack over the semiconductor substrate; implanting carbon into the semiconductor substrate; and implanting an n-type impurity into the semiconductor substrate to form a lightly doped source/drain (LDD) region, wherein the n-type impurity comprises more than one phosphorous atom. The n-type impurity may include phosphorous dimer or phosphorous tetramer.
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Wilson et al., “P2 dimer implantation in silicon: A molecular dynamics study,” Sep. 25, 2006, ScienceDirect, http://dx.doi.org, doi:10.1016/j.nimb.2006.04.172, pp. 395-401.
Chen Chi-Chun
Cheng Nai-Han
Ku Keh-Chiang
Lin Li-Te S.
Nieh Chun-Feng
Perkins Pamela E
Slater & Matsil L.L.P.
Smith Zandra
Taiwan Semiconductor Manufacturing Company , Ltd.
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