Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-15
2006-08-15
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S317000, C438S354000, C438S349000
Reexamination Certificate
active
07091082
ABSTRACT:
A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.
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Feng Milton
Holonyak, Jr. Nick
Coleman W. David
Kim Su C.
Novack Martin
The Board of Trustees of the University of Illinois
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