Metal treatment
Barrier layer stock material, p-n type
Inventor
active
Collector layer structure for a double hetero-junction...
Electromagnetic energy controlled low actuation voltage...
Growth of P type Group III-V compound semiconductor on Group IV
Growth of P type Group III-V compound semiconductor on Group IV
High cycle deflection beam MEMS devices
No associations
LandOfFree
Milton Feng does not yet have a rating. At this time, there are no reviews or comments for this inventor.
If you have personal experience with Milton Feng, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Milton Feng will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-P-604010