Semiconductor memory device and method of fabricating the same

Details Semiconductor memory device and method of fabricating the same Semiconductor memory device and method of fabricating the same

2006-05-02

2006-05-02

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000

Reexamination Certificate

active

07037780

ABSTRACT:
A silicon nitride film for storing electric charge is formed on a semiconductor substrate while placing a tunnel oxide film in between, and the silicon nitride film is then subjected to hydrogen plasma treatment so as to effectively erase unnecessary charge stored therein during various process steps in fabrication of the semiconductor memory device, to thereby stabilize the threshold voltage (Vth) of the semiconductor memory device.

REFERENCES:
patent: 6677204 (2004-01-01), Cleeves et al.
patent: 6794694 (2004-09-01), Diodato et al.
patent: 2002/0137288 (2002-09-01), Nomoto et al.
patent: 2003/0157765 (2003-08-01), Allman et al.
patent: WO 94/10686 (1994-05-01), None

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