Semiconductor device with split gate electrode structure and...

Details Semiconductor device with split gate electrode structure and... Semiconductor device with split gate electrode structure and...

2005-12-13

2005-12-13

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S265000

Reexamination Certificate

active

06974748

ABSTRACT:
A semiconductor device includes a substrate divided into a memory cell region and a logic region. A split gate electrode structure is formed in a memory cell region of a substrate. A silicon oxide layer is formed on a sidewall of the split gate electrode structure and a surface of the substrate. A word line is formed on the silicon oxide layer that is positioned on the sidewall of the split gate electrode structure. The word line has an upper width and a lower width. The lower width is greater than the upper width. A logic gate pattern is formed on a logic region of the substrate. The logic gate pattern has a thickness thinner than the lower width of the word line.

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