Semiconductor device with high-K/dual metal gate

Details Semiconductor device with high-K/dual metal gate Semiconductor device with high-K/dual metal gate

2011-03-29

2011-03-29

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S233000

Reexamination Certificate

active

07915111

ABSTRACT:
An apparatus, and method of manufacture thereof, comprising a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first gate electrode having a first metal layer forming a first trench and a second metal layer filling the first trench, wherein the first and second metal layers have substantially different metallic compositions. The second semiconductor device includes a second gate electrode having a third metal layer forming a second trench and a fourth metal layer filling the second trench, wherein the third and fourth metal layers have substantially different metallic compositions, and wherein the first and third metal layers have substantially different metallic compositions.

REFERENCES:
patent: 6303418 (2001-10-01), Cha et al.
patent: 7160767 (2007-01-01), Brask et al.
patent: 2001/0027005 (2001-10-01), Moriwaki et al.
patent: 2006/0278934 (2006-12-01), Nagahama

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