Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21198
Reexamination Certificate
active
10870878
ABSTRACT:
A semiconductor device having a random grained polysilicon layer and a method for its manufacture are provided. In one example, the device includes a semiconductor substrate and an insulator layer on the substrate. A first polysilicon layer having a random grained structure is positioned above the insulator layer, a semiconductor alloy layer is positioned above the first polysilicon layer, and a second polysilicon layer is positioned above the semiconductor alloy layer.
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Chen Chia-Lin
Chen Shih-Chang
Yao Liang-Gi
Chaudhari Chandra
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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