Semiconductor device having a random grained polysilicon...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21198

Reexamination Certificate

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10870878

ABSTRACT:
A semiconductor device having a random grained polysilicon layer and a method for its manufacture are provided. In one example, the device includes a semiconductor substrate and an insulator layer on the substrate. A first polysilicon layer having a random grained structure is positioned above the insulator layer, a semiconductor alloy layer is positioned above the first polysilicon layer, and a second polysilicon layer is positioned above the semiconductor alloy layer.

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patent: 5633177 (1997-05-01), Anjum
patent: 5998289 (1999-12-01), Sagnes
patent: 6153534 (2000-11-01), Long et al.
patent: 6180499 (2001-01-01), Yu
patent: 6214681 (2001-04-01), Yu
Bu et al. “Investigation of polycrystalline silicon grain structure with single wafer chemical vapor depostition technique”, J. Vac. Sci. Technol. A 19(4), Jul./Aug. 2001.

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