Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
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Device performance improvement by heavily doped pre-gate and...
High temperature hydrogen annealing of a gate insulator...
Method and structure for forming high-k gates
Method for determining time dependent dielectric breakdown
Method for fabricating laminated silicon gate electrode
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Profile ID: LFUS-PAI-P-2393515