Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-06-28

2005-06-28

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

Ionized irradiation

C438S430000, C438S431000, C438S687000

Reexamination Certificate

active

06911405

ABSTRACT:
A process gas consisting of one of N2, N2O or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

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Furusawa et al., Simple, reliable Cu/low-k interconnect integration using mechanically strong low-k dielectric material: silicon-oxycarbide (Jun. 2000), IEEE, International technology conference, pp. 222-224.

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