Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-09-18
2011-12-13
Lee, Hsien Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S615000, C257S734000, C257S737000, C257S778000, C257SE23021
Reexamination Certificate
active
08076232
ABSTRACT:
A semiconductor device has a semiconductor die mounted to a substrate with a plurality of composite interconnects formed between interconnect sites on the substrate and bump pads on the die. The interconnect sites are part of traces formed on the substrate. The interconnect site has a width between 1.0 and 1.2 times a width of the trace. The composite interconnect is tapered. The composite interconnects have a fusible portion connected to the interconnect site and non-fusible portion connected to the bump pad. The non-fusible portion can be gold, copper, nickel, lead solder, or lead-tin alloy. The fusible portion can be tin, lead-free alloy, tin-silver alloy, tin-silver-copper alloy, tin-silver-indium alloy, eutectic solder, or other tin alloys with silver, copper, or lead. An underfill material is deposited between the semiconductor die and substrate. A finish such as Cu-OSP can be formed over the substrate.
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Atkins Robert D.
Lee Hsien Ming
Patent Law Group
STATS ChipPAC Ltd.
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