Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-17
2006-01-17
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S303000, C438S311000, C438S592000, C438S655000, C438S663000, C438S664000, C438S682000, C438S683000
Reexamination Certificate
active
06987050
ABSTRACT:
A method (and resulting structure) for fabricating a silicide for a semiconductor device, includes depositing a metal or an alloy thereof on a silicon substrate, reacting the metal or the alloy to form a first silicide phase, etching any unreacted metal, depositing a silicon cap layer over the first silicide phase, reacting the silicon cap layer to form a second silicide phase, for the semiconductor device, and etching any unreacted silicon. The substrate can be either a silicon-on-insulator (SOI) substrate or a bulk silicon substrate.
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Cabral, Jr. Cyril
Chan Kevin Kok
Cohen Guy Moshe
Lavoie Christian
Roy Ronnen Andrew
Cheung, Esq. Wan Yee
Kielin Erik
McGinn & Gibb PLLC
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