Self-aligned metal to form contacts to Ge containing...

Details Self-aligned metal to form contacts to Ge containing... Self-aligned metal to form contacts to Ge containing...

2004-05-04

2008-11-11

Smith, Bradley K (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S741000, C257S769000, C257SE23157

Reexamination Certificate

active

07449782

ABSTRACT:
A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.

REFERENCES:
patent: 6331486 (2001-12-01), Cabral et al.
patent: 7119417 (2006-10-01), Sorada et al.
patent: 2003/0109121 (2003-06-01), Rotondaro
patent: 2003/0234439 (2003-12-01), Currie et al.
patent: 2005/0006711 (2005-01-01), Rotondaro et al.

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