Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-11-28
2006-11-28
Lindsay, Jr., Walter (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S696000, C438S770000, C257SE21001, C257SE21285, C257SE21165, C257SE21243, C257SE21413, C257SE29280
Reexamination Certificate
active
07141514
ABSTRACT:
A transistor gate selective re-oxidation process includes the steps of introducing into the vacuum chamber containing the semiconductor substrate a process gas that includes oxygen while maintaining a vacuum pressure in the chamber. An oxide insulating layer on the order of several Angstroms in thickness is formed by generating a plasma in a plasma generation region within the vacuum chamber during successive “on” times, and allowing ion energy of the plasma to decay during successive “off” intervals separating the successive “on” intervals, the “on” and “off” intervals defining a controllable duty cycle. During formation of the oxide insulating layer, the duty cycle is limited so as to limit formation of ion bombardment-induced defects in the insulating layer, while the vacuum pressure is limited so as to limit formation of contamination-induced defects in the insulating layer.
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Applied Materials Inc.
Dinh Thu-Huong
Law Office of Robert M. Wallace
Lindsay, Jr. Walter
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