Selective plasma etching of silicon nitride in presence of silic

Details Selective plasma etching of silicon nitride in presence of silic Selective plasma etching of silicon nitride in presence of silic

1997-03-31

1998-07-28

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438719, 438723, 438740, B44C 122, H01L 21302

Patent

active

057862761

ABSTRACT:
A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH.sub.3 F/CF.sub.4 /O.sub.2 recipe and a CH.sub.2 F.sub.2 /CF.sub.4 /O.sub.2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity towards the SiN material. A pins-up scheme is used for simultaneously stripping away backside nitride with topside nitride.

REFERENCES:
patent: 4529476 (1985-07-01), Kawamoto et al.
patent: 4654114 (1987-03-01), Kadomura
patent: 5201994 (1993-04-01), Nonaka et al.
patent: 5318668 (1994-06-01), Tamaki et al.

Affiliated with

Also associated with

Rating

Selective plasma etching of silicon nitride in presence of silic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Selective plasma etching of silicon nitride in presence of silic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Selective plasma etching of silicon nitride in presence of silic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-23209