Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-13
2009-08-25
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S229000, C257S346000, C257SE21619, C257SE21634
Reexamination Certificate
active
07579248
ABSTRACT:
A method for improving uniformity of stressors of MOS devices is provided. The method includes forming a gate dielectric over a semiconductor substrate, forming a gate electrode on the gate dielectric, forming a spacer on respective sidewalls of the gate electrode and the gate dielectric, forming a recess in the semiconductor adjacent the spacer, and depositing SiGe in the recess to form a SiGe stressor. The method further includes etching the SiGe stressor to improve the uniformity of SiGe stressors.
REFERENCES:
patent: 2006/0088968 (2006-04-01), Shin et al.
patent: 2006/0115933 (2006-06-01), Ye et al.
patent: 2006/0240630 (2006-10-01), Bauer et al.
Huang, C.-C., et al., “Design and Integration of Strained SiGe/Si Hetero-Structure CMOS Transistors,” IEEE, 2005, pp. 23-24.
Ko, C.H., et al., “A Novel Process-Induced Strained Silicon (PSS) CMOS Technology for High-Performance Applications,” IEEE, 2005, pp. 25-26.
Ouyang, Q., et al., “Characteristics of High Performance PFETs with Embedded SiGe Source/Drain and <100> Channels on 45° Rotated Wafers,” IEEE, 2005, pp. 27-28.
Huang Jim
Huang Yu-Lien
Tao Hun-Jan
Yeh Ling-Yen
Fulk Steven J
Menz Douglas M
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Resolving pattern-loading issues of SiGe stressor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Resolving pattern-loading issues of SiGe stressor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Resolving pattern-loading issues of SiGe stressor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4099449