Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2006-02-21
2010-02-09
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S756000, C438S770000, C438S771000, C438S773000, C438S786000, C438S787000, C438S788000, C438S705000, C438S004000, C257SE21250, C257SE21251, C257SE21252, C257SE21277, C257SE21241
Reexamination Certificate
active
07659206
ABSTRACT:
A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.
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Balagani Venkata
Bhatnagar Yashraj
Rayandayan Ronald
Vepa Krishna
Applied Materials Inc.
Janah & Associates P.C.
Wilczewski M.
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