Removal of silicon oxycarbide from substrates

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S756000, C438S770000, C438S771000, C438S773000, C438S786000, C438S787000, C438S788000, C438S705000, C438S004000, C257SE21250, C257SE21251, C257SE21252, C257SE21277, C257SE21241

Reexamination Certificate

active

07659206

ABSTRACT:
A method of treating a substrate comprises depositing silicon oxycarbide on the substrate and removing the silicon oxycarbide from the substrate. The silicon oxycarbide on the substrate is decarbonized by exposure to an energized oxygen-containing gas that heats the substrate and converts the layer of silicon oxycarbide into a layer of silicon oxide. The silicon oxide is removed by exposure to a plasma of fluorine-containing process gas. Alternatively, the remaining silicon oxide can be removed by a fluorine-containing acidic bath. In yet another version, a plasma of a fluorine-containing gas and an oxygen-containing gas is energized to remove the silicon oxycarbide from the substrate.

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