Remote plasma activated nitridation

Details Remote plasma activated nitridation Remote plasma activated nitridation

2005-08-24

2009-12-08

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S771000, C438S775000, C257SE21267

Reexamination Certificate

active

07629270

ABSTRACT:
A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2alone, or thermal nitridation using NH3alone, with the same process temperatures and nitridation durations.

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