Reduction of polysilicon contact resistance by nitrogen implanta

Details Reduction of polysilicon contact resistance by nitrogen implanta Reduction of polysilicon contact resistance by nitrogen implanta

1997-12-08

1999-10-05

Trinh, Michael

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438659, 438528, 438622, H01L 2131, H01L 2144

Patent

active

059638397

ABSTRACT:
Making low resistance contact between two silicon layers has been accomplished by implanting nitrogen ions into a freshly formed silicon surface thereby forming a nitrogen rich layer at the surface which suppresses formation of a surface layer of oxide, the normal 20-30 Angstrom thick native oxide being now restricted to 3 or 4 Angstroms. When a layer of polysilicon is deposited onto this nitrided surface good, low resistance electrical contact is made. The process is fully compatible with existing methods for the manufacture of integrated circuits. An example of its application to making low resistance contact to a FET gate electrode is given.

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Liu et al., "Light Nitrogen Implant for Preparing Thin-Gate Oxides", IEEE Electron Device Letters, vol. 18, No. 3, Mar. 1997, pp. 105-107.
Yang et al., "Improved Electrical Characteristics of Thin-Film Transistors Fabricated on Nitrogen Implanted Polysilicon Films", IEDM, pp. 505-508, Jan. 1994.
Kuroi et al. "Highly Reliable 0.15 Micron Mosfets with Surface Proximity Gettering (SPG) And Nitrided Oxide Spacer Using Nitrogen Implantation", 1995 Symposium on VLSI Technology Digest, p. 19-20.

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