Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2011-01-11
2011-01-11
Smith, Matthew S (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S424000, C438S800000, C257SE21546, C257SE21278, C257SE21494
Reexamination Certificate
active
07867921
ABSTRACT:
A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
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Bloking Jason Thomas
Jeon Jin Ho
Lee Young S.
Mungekar Hemant P.
Vellaikal Manoj
Applied Materials Inc.
Jefferson Quovaunda
Smith Matthew S
Townsend and Townsend and Crew
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