Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-08
2006-08-08
Schillinger, Laura M. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
75
Reexamination Certificate
active
07087480
ABSTRACT:
A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
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Chen Shih-Chang
Liang Mon-Song
Wang Ming-Fang
Yao Liang-Gi
Haynes and Boone LLP
Schillinger Laura M.
Taiwan Semiconductor Manufacturing Company , Ltd.
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