Process for increasing the etch resistance and for reducing...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S325000, C430S330000, C430S331000, C430S401000, C430S414000, C430S432000

Reexamination Certificate

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07018784

ABSTRACT:
The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

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John Simmons et al.: “Image Collapse Issues in Photoresist”,Proceedings of SPIE,vol. 4345, 2001, pp. 19-29.
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