Process for forming silicon carbide films and microcomponents

Details Process for forming silicon carbide films and microcomponents Process for forming silicon carbide films and microcomponents

1995-07-27

1999-01-19

Breneman, R. Bruce

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438768, 438931, 427249, 4272554, 117951, C30B 2936

Patent

active

058613463

ABSTRACT:
Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

REFERENCES:
patent: 5053255 (1991-10-01), Boeglin
patent: 5209916 (1993-05-01), Gruen
patent: 5415126 (1995-05-01), Loboda et al.
patent: 5558903 (1996-09-01), Bhushan et al.
Chen, D. et al "Fabrication of SiC Films on Si(100) using a C.sub.- 60 molecular source" Electronics Letters, vol. 30, No. 12, pp. 1007-1008, Jun. 1994.
Henke, S. et al "Synthesis of epitaxial b-SiC by C.sub.- 60 carbonization of silicon" J. Appl. Phys., vol. 78, No. 3, pp. 2070-2073, Aug. 1995.
Surface Science Letters, Growth of Silicon Carbide Films Via C.sub.60 precursors, A.V. Hamza et al; Lawrence Livermore National Laboratory, pp. L1129-L1135, vol. 317, Oct. 1994.
SiC Microcomponents Via Reaction of C.sub.60 With Silicon, M. Balooch et al., J. Vac. sci. Technol. B 12(6), Nov./Dec. 1994, pp. 3218-3219.
The Chemisorption of C.sub.60 on Si (100)--(2X1), A.V. Hamza et al., Chemical Physics Letters, vol. 201, No. 5,6, pp. 404-408.
C.sub.58 Production From Dissociation of C.sub.60 by Scattering From Silica and Highly Oriented Pyrolytic Graphite, A.V. Hamza et al., Chemical Physics Letters 228 (1994), pp. 117-121.
Observation of C.sub.60 Cage Opening on Si (111)--(7X7), M. Balooch et al., Appl. Phys. Lett. 63 (2), Jul. 12, 1993, pp. 150-152.
Surface Mobility of C.sub.60 On SiO.sub.2, M. Moalem et al., J. Chem. Phys. 99 (6), 15 Sep. 1993, pp. 4855-4859.
Sappire (1120) Surface: Structure and Laser-Induced Desorption of Aluminum, M.A. Schildbach et al., Physical Review B, vol. 45, No. 11, pp. 6197-6206.
Double Doman Solid C.sub.60 on Si (111) 7X7, Hang Xu et al., Physical Review, vol. 70, No. 12, pp. 1850-1853.
Fullerene (C.sub.60) Adsorption on Si Surfaces, T. Sakurai et al., Applied Surface Science 67 (1993) 281-285.
Adsorption of C.sub.60 and C.sub.84 on the Si (100) 2 X 1 Surface Studied by Using the Scanning Tunneling Microscope, X.D. Wang et al., Physical Review, vol. 47, No. 23.
Temperature Effects of Adsorption of C.sub.60 Molecules on Si (111)--(7x7) Surfaces, Dong Chen et al., Physical Review, vol. 49, No. 11, pp. 7612-7619.

Affiliated with

Also associated with

Rating

Process for forming silicon carbide films and microcomponents does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming silicon carbide films and microcomponents, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming silicon carbide films and microcomponents will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1246449