Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-20
2007-11-20
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S257000, C438S265000, C257S298000, C257S315000, C257SE21682, C257SE21689
Reexamination Certificate
active
11045850
ABSTRACT:
A method of making embedded non-volatile memory devices includes forming a first mask layer overlying a polycrystalline silicon layer in a cell region and a peripheral region on a semiconductor substrate wherein the first mask layer has a plurality of openings in the cell region. Portions of the polycrystalline silicon layer exposed in the plurality of openings can be oxidized to form a plurality of poly-oxide regions, and the first mask layer can then be removed. The polycrystalline silicon layer not covered by the plurality of poly-oxide regions can be etched to form a plurality of floating gates, wherein etching the polycrystalline silicon layer is accompanied by a sputtering. A dielectric layer can then be formed, as well as a second mask layer in both the cell region and the peripheral region. The second mask layer in the cell region is partially etched back after a photoresist layer is formed over the second mask layer in the peripheral region. The dielectric layer is partially etched to form multiple thicknesses of the dielectric layer. The second mask layer is removed and a plurality of control gates are formed partially overlying the plurality of floating gates in the cell region.
REFERENCES:
patent: 6297099 (2001-10-01), Hsieh et al.
patent: 6563168 (2003-05-01), Lee
patent: 2005/0009358 (2005-01-01), Choi et al.
Chu Wen-Ting
Fu Shih-Chi
Hsieh Chia-Ta
Liu Shih-Chang
Lo Chi-Hsin
Haynes and Boone LLP
Huynh Andy
Nguyen Dao H.
Taiwan Semiconductor Manufacturing Company , Ltd.
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