Process flow for dual damescene interconnect structures

Details Process flow for dual damescene interconnect structures Process flow for dual damescene interconnect structures

2005-03-29

2005-03-29

Kunemund, Robert (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S724000, C438S722000, C438S725000, C438S745000, C438S757000

Reexamination Certificate

active

06872665

ABSTRACT:
A dual damascene process flow for forming interconnect lines and vias in which at least part of the via (116) is etched prior to the trench etch. A low-k material such as a thermoset organic polymer is used for the ILD (106) and IMD (110). After the at least partial via etch, a BARC (120) is deposited over the structure including in the via (116). Then, the trench (126) is patterned and etched. Although at least some of the BARC (120) material is removed during the trench etch, the bottom of the via (116) is protected.

REFERENCES:
patent: 5858870 (1999-01-01), Zheng et al.
patent: 6019906 (2000-02-01), Jang et al.
patent: 6057239 (2000-05-01), Wang et al.
patent: 6060380 (2000-05-01), Subramanian et al.
patent: 6140226 (2000-10-01), Grill et al.
patent: 6156643 (2000-12-01), Chan et al.
patent: 6211061 (2001-04-01), Chen et al.
patent: 6235633 (2001-05-01), Jang
patent: 6245669 (2001-06-01), Fu et al.
patent: 6319822 (2001-11-01), Chen et al.
patent: 6329117 (2001-12-01), Padmanaban et al.
patent: 6380096 (2002-04-01), Hung et al.

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