Pre-endpoint techniques in photoresist etching

Details Pre-endpoint techniques in photoresist etching Pre-endpoint techniques in photoresist etching

2006-02-21

2006-02-21

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S060000, C216S067000, C438S725000, C430S313000

Reexamination Certificate

active

07001529

ABSTRACT:
A method for controlling a photoresist etch step in a plasma processing chamber is disclosed. The photoresist etch step being configured to etch back a photoresist layer deposited on a substrate surface to a thinner photoresist layer having predefined photoresist thickness. The method includes etching the photoresist layer using a plasma etch process and detecting interference patterns coming from the photoresist layer. The method further includes terminating the photoresist etch step when an analysis of the interference patterns indicates that the predefined photoresist thickness is achieved, whereby the predefined photoresist thickness is greater than zero.

REFERENCES:
patent: 5516729 (1996-05-01), Dawson et al.
patent: 5565114 (1996-10-01), Saito et al.
patent: 6638853 (2003-10-01), Sue et al.
patent: 6764810 (2004-07-01), Ma et al.

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